Organization: Industrial Technology Research Institute (ITRI)
Year: 2017

CyberEpi is a software suite for determining epitaxial process parameters from weeks to minutes and optimizing Metal Organic Chemical Vapor Deposition (MOCVD) design parameters to improve productivity and yield in the LED (Light Emitting Diode), optoelectronics, and semiconductor industries. CyberEpi can determine atomic epitaxial processes and optimize MOCVD machines based on coupled high-temperature multiple physics and chemistry simulation. CyberEpi includes a 2/3-dimensional process simulation capability for compound growth by MOCVD. Given the deposition reactor geometry, chemical species and growth condition parameters, CyberEpi predicts the film growth rate and thickness uniformity based on detailed chemical kinetics and mass/heat transfer models. CyberEpi helps shorten epitaxial processes development and equipment improvement cycles and reduces costs by efficiently providing optimal parameters. CyberEpi is intended for MOCVD users wishing to develop new growth procedures or improve their existing deposition process parameters and MOCVD equipment developers wishing to improve current reactor designs or develop new showerheads for higher yield and throughput.